Magnetoresistance effect in ferromagnetic metal foil
نویسندگان
چکیده
منابع مشابه
Theory of anisotropic magnetoresistance in atomic-sized ferromagnetic metal contacts
M. Häfner,1,2 J. K. Viljas,1,3 and J. C. Cuevas2 1Institut für Theoretische Festkörperphysik and DFG-Center for Functional Nanostructures, Universität Karlsruhe, D-76128 Karlsruhe, Germany 2Departamento de Física Teórica de la Materia Condensada, Universidad Autónoma de Madrid, E-28049 Madrid, Spain 3Low Temperature Laboratory, Helsinki University of Technology, P.O. Box 5100, FIN-02015 TKK, Fi...
متن کاملAnisotropic magnetoresistance and anisotropic tunneling magnetoresistance due to quantum interference in ferromagnetic metal break junctions.
We measure the low-temperature resistance of permalloy break junctions as a function of contact size and the magnetic field angle in applied fields large enough to saturate the magnetization. For both nanometer-scale metallic contacts and tunneling devices we observe large changes in resistance with the angle, as large as 25% in the tunneling regime. The pattern of magnetoresistance is sensitiv...
متن کاملSurface magnetoelectric effect in ferromagnetic metal films.
A surface magnetoelectric effect is revealed by density-functional calculations that are applied to ferromagnetic Fe(001), Ni(001), and Co(0001) films in the presence of an external electric field. The effect originates from spin-dependent screening of the electric field which leads to notable changes in the surface magnetization and the surface magnetocrystalline anisotropy. These results are ...
متن کاملSupplementary material for “ Anisotropic magnetoresistance in ferromagnetic atomic - sized metal contacts ”
The elements h iα,iα;σ are the spin-dependent on-site energies, h (0) iα,jβ;σ for i 6= j are the hopping elements, while h (0) iα,iβ;σ = 0 for α 6= β. For a nonorthogonal basis |iασ〉 we additionally need the spin-independent overlap integrals between different orbitals: Siασ,jβσ′ = 〈iασ|jβσ′〉 = siα,jβδσσ′ . The creation and annihilation operators then satisfy {ĉiασ, ĉjβσ′} = [s−1]iα,jβδσσ′ . In...
متن کاملFerromagnetic Multilayers: Magnetoresistance, Magnetic Anisotropy, and Beyond
Obtaining highly sensitive ferromagnetic, FM, and nonmagnetic, NM, multilayers with a large room-temperature magnetoresistance, MR, and strong magnetic anisotropy, MA, under a small externally applied magnetic field, H, remains a subject of scientific and technical interest. Recent advances in nanofabrication and characterization techniques have further opened up several new ways through which ...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: Journal of Physics: Conference Series
سال: 2017
ISSN: 1742-6588,1742-6596
DOI: 10.1088/1742-6596/918/1/012018